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Power MOSFETs with IXTB 30N100L IXTN 30N100L Extended FBSOA
N-Channel Enhancement Mode Avalanche Rated
VDSS = 1000 V ID25 = 30 A RDS(on) 0.45
Symbol V DSS VDGR VGS VGSM ID25 IDM IAR EAR E AS PD TJ TJM Tstg TL VISOL Md FC Weight
Test Conditions TJ = 25C to 150C TJ = 25C to 150C; RGS = 1 M Continuous Transient TC = 25C TC = 25C, Pulse width limited by TJM TC = 25C TC = 25C TC = 25C TC = 25C
Maximum Ratings IXTB IXTN 1000 1000 30 40 30 70 30 80 2.0 800 1000 1000 30 40 30 70 30 80 2.0 800 150 -55 ... +150 V V V V A A A mJ J W C C C C V~ V~
PLUS264 (IXTB)
G D S
(TAB)
miniBLOC, SOT-227 B (IXTN) E153432
S D G
-55 ... +150
G S S D S
1.6 mm (0.063 in) from case for 10 s 50/60 Hz, RMS IISOL < 1 mA t = 1 min t=1s
300 -
2500 3000
G = Gate S = Source
D = Drain TAB = Drain
Either Source terminal at miniBLOC can be used as Main or Kelvin Source
Mounting torque Terminal connection torque Mounting force PLUS264 SOT-227B
1.5/13 Nm/lb.in. 1.5/13 Nm/lb.in. 10 30 N/lb. g g
28..150 /6.4..30
Features * Designed for linear operation * International standard packages * Molding epoxies meet UL 94 V-0 flammability classification * SOT-227B miniBLOC with aluminium nitride isolation Applications * Programmable loads * Current regulators * DC-DC converters * Battery chargers * DC choppers * Temperature and lighting controls Advantages * Easy to mount * Space savings * High power density
Symbol
Test Conditions (TJ = 25C unless otherwise specified) VGS = 0 V, ID = 1 mA VDS = VGS, ID = 250 A VGS = 30 VDC, VDS = 0 VDS = VDSS, VGS = 0 V TJ = 25C TJ = 125C
Characteristic Values Min. Typ. Max. 1000 3 5 200 50 1 0.45 V V nA A mA
VDSS VGS(th) IGSS IDSS
RDS(on)
VGS = 20 V, ID = 0.5 * ID25, Note 1
IXYS reserves the right to change limits, test conditions, and dimensions. (c) 2006 IXYS All rights reserved
DS99501A(01/06)
IXTB 30N100L IXTN 30N100L
Symbol Test Conditions Characteristic Values (TJ = 25C unless otherwise specified) Min. Typ. Max. 6 10 11.4 800 150 36 70 100 78 VGS = 15 V, VDS = 0.5 * VDSS, ID = 0.5 * ID25 530 125 150 0.15 0.05 15 S nF pF pF ns ns ns ns nC nC nC 0.156 K/W K/W K/W PLUS264 Outline
gfs Ciss Coss Crss td(on) tr td(off) tf Qg(on) Qgs Qgd RthJC RthCK RthCK
VDS = 20 V; ID = 0.5 * ID25, pulse test VGS = 0 V, VDS = 25 V, f = 1 MHz
VGS = 15 V, VDS = 0.5 * VDSS, ID = 0.5 * ID25 RG = 2 (External)
PLUS264 SOT-227B
Safe Operating Area Specification Symbol SOA Test Conditions VDS = 600 V, ID = 0.5A, TC = 90C Min. 300 Typ. Max. W miniBLOC, SOT-227 B Source-Drain Diode Symbol IS ISM VSD t rr Test Conditions VGS = 0 V Repetitive; pulse width limited by TJM IF = IS, VGS = 0 V, Pulse test, t < 300 ms, duty cycle d < 2 % IF = IS, -di/dt = 100 A/s, VR = 100 V 1000 Characteristic Values (TJ = 25C unless otherwise specified) Min. Typ. Max. 30 50 1.5 A A V
M4 screws (4x) supplied
Dim. A B C D E F G H J K L M N O P Q R S T U Millimeter Min. Max. 31.50 7.80 4.09 4.09 4.09 14.91 30.12 38.00 11.68 8.92 0.76 12.60 25.15 1.98 4.95 26.54 3.94 4.72 24.59 -0.05 31.88 8.20 4.29 4.29 4.29 15.11 30.30 38.23 12.22 9.60 0.84 12.85 25.42 2.13 5.97 26.90 4.42 4.85 25.07 0.1 Inches Min. Max. 1.240 0.307 0.161 0.161 0.161 0.587 1.186 1.496 0.460 0.351 0.030 0.496 0.990 0.078 0.195 1.045 0.155 0.186 0.968 -0.002 1.255 0.323 0.169 0.169 0.169 0.595 1.193 1.505 0.481 0.378 0.033 0.506 1.001 0.084 0.235 1.059 0.174 0.191 0.987 0.004
ns
Note 1: Pulse test, t < 300 s, duty cycle d < 2 %
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,710,405B2 6,710,463 6,727,585 6,759,692 6771478 B2
IXTB 30N100L IXTN 30N100L
Fig. 1. Output Characteristics @ 25C
30 27 24 21 VGS = 20V 16V 14V 12V 10V 70 VGS = 20V 16V
Fig. 2. Extended Output Characteristics @ 25C
60 50
ID - Amperes
ID - Amperes
18 15 12 9 6 3 0 0 1 2 3 4 5 6 7 8 9 10 8V 9V
12V 40
30
10V
20 9V 10 7V 6V 0 0 5 10 15 20 25 30 8V 7V
VDS - Volts
VDS - Volts
Fig. 3. Output Characteristics @ 125C
30 27 24 21 VGS = 20V 14V 12V 10V 3.1 2.8 2.5
Fig. 4. RDS(on) Normalized to ID = 32A Value vs. Junction Temperature
VGS = 20V
RDS(on) - Normalized
ID - Amperes
2.2 1.9 I D = 30A 1.6 I D = 15A 1.3 1
18 15 12 9 6 3 0 0 3 6 9 12
9V
8V
7V 0.7 6V 15 18 21 24 0.4 -50 -25 0 25 50 75 100 125 150
VDS - Volts
TJ - Degrees Centigrade
Fig. 5. RDS(on) Normalized to 0.5 ID25 Value vs. Drain Current
2.8 2.6 2.4 VGS = 20V TJ = 125C 33 30 27 24
Fig. 6. Maximum Drain Current vs. Case Temperature
RDS(on) - Normalized
2.2
ID - Amperes
TJ = 25C 0 10 20 30 40 50 60 70
2 1.8 1.6 1.4 1.2 1 0.8
21 18 15 12 9 6 3 0 -50 -25 0 25 50 75 100 125 150
I D - Amperes
TJ - Degrees Centigrade
(c) 2006 IXYS All rights reserved
IXTB 30N100L IXTN 30N100L
Fig. 7. Input Admittance
45 40 35 16 22 20 18
Fig. 8. Transconductance
g f s - Siemens
ID - Amperes
30 25 20 15 10 TJ = 125C 25C - 40C
14 12 10 8 6 4 TJ = - 40C 25C 125C
5 0 4 5 6 7 8 9 10 11
2 0 0 5 10 15 20 25 30 35 40 45
VGS - Volts
I D - Amperes
Fig. 9. Forward Voltage Drop of Intrinsic Diode
100 90 80 70 20 18 16 14 VDS = 500V I D = 15A I G = 10mA
Fig. 10. Gate Charge
IS - Amperes
60 50 40 30 20 10 0 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 TJ = 25C TJ = 125C
VGS - Volts
12 10 8 6 4 2 0 0 100 200 300 400 500 600
VSD - Volts
QG - NanoCoulombs
Fig. 11. Capacitance
100,000 f = 1 MHz
Capacitance - PicoFarads
C iss 10,000
1,000
C oss
100 C rss
10 0 5 10 15 20 25 30 35 40
VDS - Volts
IXYS reserves the right to change limits, test conditions, and dimensions.
IXTB 30N100L IXTN 30N100L
Fig. 12. Forward-Bias Safe Operating Area @ TC = 25C
100 25s 100s 25s 100s 10 100
Fig. 13. Forward-Bias Safe Operating Area @ TC = 90C
I D - Amperes
I D - Amperes
1ms
10
1ms 10ms 1 DC
10ms 1
DC
TJ = 150C 0 10 100 1000 10000 0 10
TJ = 150C 100 1000 10000
VDS - Volts
VDS - Volts
Fig. 14. Maximum Transient Thermal Resistance
1.000
R(th)JC - C / W
0.100
0.010
0.001 0.0001
0.001
0.01
0.1
1
10
Pulse Width - Seconds
(c) 2006 IXYS All rights reserved

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